SK hynix Starts Mass Production of 321-Layer 2Tb QLC NAND
SK hynix has announced that its 321-layer 2Tb (Terabit) QLC NAND flash memory is now undergoing mass production following a period of development. This is said to be the world's first NAND to implement over 300 layers using QLC technology, thereby setting a new standard for NAND density.
With the commencement of mass production, Jeong Woopyo, Head of NAND Development at SK hynix, expressed:
"We have considerably strengthened our high-capacity product portfolio and secured cost competitiveness. We will make a major leap forward as a full-stack AI memory provider."
Key Technological Advancements and Performance Enhancements
SK hynix designed several improvements aimed at achieving cost competitiveness and high performance. The new 2Tb device doubled the capacity of current solutions and increased the number of internal planes from four to six, which allows for increased parallel processing. Compared to previous QLC products, the 321-layer NAND offers several major advantages:
- Bus Interface Throughput: Doubled.
- Write Performance: Improved by up to 56%.
- Read Latency: Improved by 18%.
- Power Efficiency: With a more than 23% increase in write power efficiency-determining factor for AI data centers.
Product Applications and Strategy Ahead
SK hynix plans a phased release approach for its new 321-layer NAND. The first application is for PC SSDs, followed by enterprise SSDs (eSSDs) to be used in data centers and UFS storage for smartphones.
Furthermore, the company plans to leverage its proprietary 32DP (32 Die Package) technology which facilitates the stacking of 32 NAND dies into a single package. This will allow SK hynix to manufacture ultra-high-capacity eSSDs tailored towards the emerging AI server market by double the integration density.
Availability
Having already completed validation with global customers, SK hynix anticipates releasing products based on the 321-layer 2Tb QLC NAND in the first half of next year.
