Samsung LPDDR6 Memory and PM9E1 Gen5 SSD Announced for CES 2026 Next-Generation AI and Mobile Tech

Samsung will unveil next-gen LPDDR6 memory with 10.7 Gbps speeds and the compact PM9E1 Gen5 SSD at CES 2026 for high-performance AI and mobile.
Samsung LPDDR6 Memory and PM9E1 Gen5 SSD Announced for CES 2026 Next-Generation AI and Mobile Tech

Samsung Announces Next-Generation LPDDR6 Memory and PM9E1 Gen5 SSD on CES 2026

Samsung is gearing up for its next-generation memory and storage solutions, with LPDDR6 DRAM and PM9E1 Gen5 SSD being some of the highlights set to be showcased at CES 2026. These products have also won Innovation Awards prior to the event for being designed in accordance with the emerging demands of AI, mobile platforms, and high-end computing.

Next-Generation LPDDR6 DRAM

Next-Generation LPDDR6 DRAM

Samsung will unveil first LPDDR6 memory solutions next year, on an advanced 12nm process technology. The new DRAM architecture promises considerably high improvements in speed and efficiency.

  • Data Rates: Up to 10.7 Gbps, an 11.5 percent speed increase in transfer rate over current LPDDR5X.
  • Energy Efficiency: It is about 21 percent more efficient than previous LPDDR5 products, thanks to a dynamic power management system.
  • Target Applications: Engineered for data-intensive mobile applications, edge computing, and AI workloads.
  • Security: Enhanced security mechanisms protect data integrity.

Specific capacity options have yet to be announced, but a lot more detail is expected at CES. LPDDR6 aims to provide the necessary bandwidth and reliability for future intelligent systems.

PM9E1: Small but Powerful Gen5 SSD

PM9E1: Small but Powerful Gen5 SSD

Apart from the new DRAM, Samsung will also showcase the PM9E1 M.2 SSD. Obviously, this is not your average SSD since this PCIe Gen 5 NVMe drive is designed for high-performance computing in extraordinarily compact form factors.

  • Row Dimension: M.2 22x42 - This is the most maneuverable M.2 that can go through confined spaces.
  • Performance: Statistically achieved sequential read speeds of 14.8GB per second and write speeds of up to 13.4GB per second.
  • Capacity: This will be accessible in bounds of storage size, up to 4TB.
  • Internal Technology: Powered by Samsung’s in-house "Presto" controller and its V8 TLC V-NAND flash memory.
  • Security: Supports SPDM (Security Protocol and Data Model) v1.2 for device-level authentication.

It is well-optimized and engineered toward premium gaming, next-generation on-device AI, and high-end computing that require both speed and area efficiency.

There Would Be More at CES 2026

Samsung shall say more on GDDR7 and other technologies during its presentations at CES 2026.

About the author

mgtid
Owner of Technetbook | 10+ Years of Expertise in Technology | Seasoned Writer, Designer, and Programmer | Specialist in In-Depth Tech Reviews and Industry Insights | Passionate about Driving Innovation and Educating the Tech Community Technetbook

Join the conversation