Samsung GDDR7 Memory Achieves 40 Gbps Speed Record and Mass Production for NVIDIA RTX 5000 Series

Samsung unveils 40 Gbps GDDR7 memory at SIIF 2025 while starting mass production of 28 Gbps chips for the NVIDIA GeForce RTX 5000 SUPER series.
Samsung GDDR7 Memory Achieves 40 Gbps Speed Record and Mass Production for NVIDIA RTX 5000 Series

Samsung Sets Up to 40 Gbps GDDR7 Memory for Record

Samsung's latest showcase of graphics memory advancement includes an upgraded version of GDDR7 video memory that records significant speed improvements for application in future high-performance computing and gaming platforms. The latest GDDR7 presentation is at the Seoul International Invention Fair (SIIF) 2025.

New Speed Limits

This latest addition is manufactured using the homegrown 12 nm DRAM process of Samsung. It is registered at a data transfer capacity of 40 Gbps, which is 4 Gbps more than the fastest memory previously listed in Samsung's catalog for semiconductors. The new chips are available in modules of 3GB each.

All Systems Go for Mass Production and NVIDIA RTX 5000 SUPER Rumors

Industry reports further disclose the commencement of mass production of 3GB GDDR7 chips at 28 Gbps by Samsung in tandem with its exhibition of the 40 Gbps modules. Insiders suggest that these are part of the product offering for NVIDIA's GeForce RTX 5000 SUPER upcoming series of video cards.

Although the latter's speed at 28 Gbps is slower than the peak set at 40 Gbps during the fair, this appears to have been more practical in terms of manufacturing. Usage of the 28 Gbps specification should sustain the tested production pace and assures supplies for the high-volume demand that is anticipated for the SUPER series.

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