Samsung achieves major breakthrough with first operational sub 10 nanometer DRAM die using 4F square architecture to transform memory density and efficiency
Samsung Electronics achieved its first operational sub 10 nanometer DRAM die. The global semiconductor miniaturization competition enters a new stage as Samsung Electronics developed its first operational DRAM prototype which operates in single digit nanometer dimensions. The South Korean media The Elec reported that the company successfully demonstrated its 10a node working die. The present engineering path for sub 10 nanometer memory systems shows practical viability because this milestone enables quick yield improvements before scheduled mass production begins in 2028.
The new technology advances require a basic architectural transformation through which cell design moves to 4F square structure. The industry has depended on 6F square structure during its entire existence because this design uses a rectangular cell system. The new 4F square layout design produces a square cell which theoretically permits between 30 and 50 percent more units to fit on each wafer. The development is necessary to enhance memory density and power efficiency because current scaling techniques have reached their ultimate limit. Samsung developed a vertical channel transistor structure that enables transistors to stack capacitors directly above them instead of placing components in parallel arrangement to meet their space reduction requirements.
Samsung completely transformed the chip materials and internal wiring system to enable operation at this new scale. The company has shifted from using traditional silicon materials for its transistor channel to employing indium gallium zinc oxide which provides better control over leakage current in reduced sized cells. The company moved the peripheral circuits from their original position next to the cells to their new position directly below the cell array through hybrid bonding technique which provides high precision. The periphery under cell methodology enables developers to create smaller products which still deliver the required electrical performance needed for fast data processing.
The memory market has become more competitive as manufacturers pursue different technological paths to create future storage solutions. Samsung plans to develop its vertical channel transistor technology through three nodes before building complete three dimensional DRAM structures while Micron competitors aim to eliminate this intermediate phase. The operational die has established a major technical foundation which will set the upcoming industry standards through which the market will transition to 2028 production period.
