Micron Technology Samples High Density 256GB DDR5 RDIMMs Using 1 Gamma Technology to Meet Artificial Intelligence Performance and Energy Efficiency Demands
Micron Technology has begun sampling its 256G B DDR5 RDIMMs to its key server ecosystem partners. The high density RDIMMs rely on Micron's 1 gamma technology for transfers at rates up to 9.2 trillion transfers/sec, an increase of over 40% above current high volume manufactured memory hardware. Micron explains in a press release that these new modules couple the 1 gamma DRAM with advanced 3D stacking and through silicon via (TSV) packaging in order to reach their current target of meeting both capacity and power demands of artificial intelligence systems.
The architecture was designed to increase energy efficiency in mass data environments, since replacing two 128G B RDIMMs with one 256G B RDIMM will reduce the operating power by over 40%. Raj Narasimhan the senior vice president and general manager of the Cloud Memory Business Unit at Micron stated the importance of this development for the industry.
With our 256GB DDR5 RDIMM Micron is enabling servers to deliver significantly higher performance. Built on our 1 gamma DRAM using advanced 3DS and TSV packaging this solution delivers industry leading speed and power efficiency helping data center architects scale AI infrastructure more efficiently.
This memory innovation offers a solution to the extremely hardware demanding demands associated with LLMs and real time AI inference. With the proliferation of CPU cores and agents, server architects need higher bandwidth while remaining within demanding thermal power constraints. Micron is working with industry enablers to validate the 1 gamma based modules across current and next generation server architectures. This co validation will allow high speed compute and AI infrastructure to be implemented broadly and quickly.
