Samsung Electronics and SK Hynix are upgrading their manufacturing plants in China to produce advanced NAND flash memory chips above 200 layers. According to a Reuters report citing industry sources, both South Korean semiconductor giants are working through American export controls to install necessary production tools. The factory overhauls aim to counter lost market share to domestic competitor Yangtze Memory Technologies.
Samsung plans to convert its production facility in Xian to fabricate 286 layer V9 NAND flash memory. The initial run aims for 5000 wafers per month by the end of the year, scaling to 40000 monthly units by late 2027. Samsung confirmed it is moving ahead with upgrade activities while maintaining close communication with regulators in the United States.
SK Hynix aims to upgrade its manufacturing plant in Dalian to produce NAND chips exceeding 240 layers. The factory currently fabricates 192 layer memory products. Company representatives stated they are negotiating directly with American authorities to approve equipment installations at the Dalian site.
American export restrictions require foreign semiconductor firms to secure individual annual licenses before importing advanced etching equipment and related technology into China. Regulatory delays slowed factory expansion over recent quarters, allowing Chinese manufacturer Yangtze Memory Technologies to take domestic sales. Both South Korean firms are now pushing for tool clearances to protect their technical standing in the region.
