Micron Confirms 11 Gbps HBM4 Samples Shipped; Details TSMC Partnership for HBM4E
Micron made some news with its announcements regarding advancements in high-bandwidth memory and has confirmed it has shipped its first HBM4 samples with maximum-rated speeds. The company also articulated a strategic partnership with TSMC for its next-generation HBM4E memory, as discussed in its last earnings call.
Micron's HBM4 Achieved 11 Gbps in Initial Samples
Micron has now made HBM4 solutions speedier than any other ever made so far. The samples sent to first customers have pin speeds above 11 Gbps, providing in excess of 2.8 TB/s bandwidth. Micron says HBM4 is designed to outshine any competing solutions in power performance, power efficiency, and scalability.
"We have recently shipped customer samples of our HBM4 with industry-leading bandwidth exceeding 2.8 TB/s and pin speeds over 11 Gbps," said Micron President & CEO Sanjay Mehrotra. "We believe Micron Technology's HBM4 outperforms all competing HBM4 products, delivering industry-leading performance as well as best-in-class power efficiency."
Strategic Partnership with TSMC for Next-Gen HBM4E
Looking ahead to its next memory iteration, Micron is changing its manufacturing approach. Whereas its HBM4 utilizes an in-house CMOS base die, the company will partner with TSMC to manufacture the base logic die for its HBM4E memory. This partnership will cover both standard and customized versions of HBM4E, which Micron expects will be released in 2027.
"For HBM4E, Micron Technology will offer standard products as well as the option for customization of the base logic die. We are partnering with TSMC in manufacturing the HBM4E base logic die for both standard and customized products," Mehrotra explained.
Updates on GDDR7 and LPDRAM Leadership
Beyond HBM, Micron highlighted its wider leadership in the memory market:
- LPDRAM for Data Centers: Working closely with NVIDIA, Micron is the only supplier of LPDRAM for servers within NVIDIA's GB product family.
- GDDR7 for AI and Client: Micron's GDDR7 products are engineered for ultra-fast performance with future versions anticipated to exceed 40 Gbps pin speeds.
Manufacturing and Production Progress
Micron also provided updates relating to its production nodes. Micron's 1-gamma (1γ) DRAM node attained mature yields, 50 percent faster than the previous generation. Its production ramp of G9 NAND node for both TLC and QLC solutions is also going on smoothly.
