Intel Foundry Completes RAMP C Semiconductor Program for US Defense

Intel Foundry Completes RAMP C Semiconductor Program for US Defense

Intel Foundry has successfully completed the RAMP C semiconductor program. The initiative established onshore manufacturing capabilities using the advanced Intel 18A process node. High volume production is next.

The joint effort between Intel and the US Department of War launched in 2021 to secure the domestic microelectronics supply chain. Over the span of 3 distinct development phases, the program prepared defense and commercial partners for test chip designs, expanded the ecosystem, and tested early hardware prototypes. It served as a major test for advanced technologies. Specifically, the team introduced RibbonFET and PowerVia designs to increase performance per watt.

Intel remains the only 1 US company researching and manufacturing leading edge chips on domestic soil. Secure manufacturing is a major national security concern. The success of the RAMP C project provides a repeatable path from initial blueprint to mass fabrication. Program manager Eric Makara confirmed the collaboration has successfully built a state of the art design infrastructure to improve defense capabilities on shore.

With RAMP C complete, the pipeline moves directly into the Secure Enclave program. This next step focuses on scaled, high volume manufacturing of advanced chips for the US government. The transition builds on previous packaging initiatives, ensuring that mission critical systems can deploy modern silicon without relying on overseas foundries. The results are promising for the domestic chip sector.

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Majid T.
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