AMD Reveals EXPO ULL Ultra Low Latency DDR5 Memory Technology and Gaming Performance Benchmarks Showing Up To 15 Percent Improvement for Ryzen Processors
During the Computex trade show, AMD revealed a new memory overclocking subtechnology, named EXPO ULL (Ultra Low Latency). The technology is a feature integrated into the newly released EXPO 1.2 standard. According to the official AMD slide, it was created to speed up DDR5 memory kits by reducing latency and improving data transfer, with up to 15% gaming performance boost on compatible Ryzen processors.
AMD supplied the actual benchmark figures when the new profile was tested against existing setups. With the standard JEDEC DDR5 5600 CL40 specification, average framerates can reach an improvement of 13%. Compared to standard EXPO profile setups, the frame rate is increased by 4% while a noticeable boost in 1% Low FPS by 15% ensures a smoother gaming experience by reducing the chance of micro stuttering in more action packed sequences.
The tests of the hardware for the new technology were performed on an desktop system using an 8 core Ryzen 9 7000X (Zen 5 architecture) processor. Note that the boost for different CPU configurations will vary greatly: standard Ryzen non X3D processors are the best candidate to see a significant improvement in performance since they rely on system memory speeds to an great extent. The Ryzen 7 7700X3D, however, does not get many performance changes since it relies on its integrated super fast L3 cache with 3D V Cache technology for performance boost by drastically minimizing the impact of system memory speed, thus EXPO ULL is a much more useful for normal standard PC builds.
